首页> 外文OA文献 >Enhancement of thermovoltage and tunnel magneto-Seebeck effect in CoFeB based magnetic tunnel junctions by variation of the MgAl$_2$O$_4$ and MgO barrier thickness
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Enhancement of thermovoltage and tunnel magneto-Seebeck effect in CoFeB based magnetic tunnel junctions by variation of the MgAl$_2$O$_4$ and MgO barrier thickness

机译:增强CoFeB中的热电压和隧道磁塞贝克效应   基于mgal $ _2 $ O $ _4 $和mgO的变化的磁隧道结   屏障厚度

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摘要

We investigate the influence of the barrier thickness ofCo$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-inducedtunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm,we find a distinct maximum in the tunnel magneto-Seebeck effect for 2.6nmbarrier thickness. This maximum is independently measured for two barriermaterials, namely MgAl$_2$O$_4$ and MgO. Additionally, samples with anMgAl$_2$O$_4$ barrier exhibit a high thermovoltage of more than 350$\mu$V incomparison to 90$\mu$V for the MTJs with MgO barrier when heated with themaximum laser power of 150mW. Our results allow for the fabrication of improvedstacks when dealing with temperature differences across magnetic tunneljunctions for future applications in spin caloritronics, the emerging researchfield that combines spintronics and themoelectrics.
机译:我们研究了基于Co $ _ {40} $ Fe $ _ {{40} $ B $ _ {20} $的势垒厚度对激光诱导的隧道磁塞贝克效应的影响。将势垒厚度从1nm更改为3nm,对于2.6nmbarrier厚度,我们在隧道磁塞贝克效应中发现了一个明显的最大值。此最大值是针对两种阻隔材料(分别为MgAl $ _2 $ O $ _4 $和MgO)进行测量的。此外,具有MgAl $ _2 $ O $ _4 $势垒的样品在以150mW的最大激光功率加热时,与MgO势垒的MTJ相比,具有超过350 $ \ mu $ V的高热电压。我们的结果可以解决磁隧道结两端的温差问题,从而制造出改进的叠层,以备将来在自旋量热电子学中应用,这是将自旋电子学和热电学结合起来的新兴研究领域。

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